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october 2011 doc id 18146 rev 2 1/19 19 STB16N65M5 std16n65m5 n-channel 650 v, 0.230 ? , 12 a mdmesh? v power mosfet in d2pak, dpak features dpak worldwide best r ds(on) higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroe lectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max. i d STB16N65M5 710 v < 0.279 ? 12 a std16n65m5 dpak d2pak 1 3 tab 1 3 tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging STB16N65M5 16n65m5 d2pak tape and reel std16n65m5 dpak www.st.com
contents STB16N65M5, std16n65m5 2/19 doc id 18146 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB16N65M5, std16n65m5 electrical ratings doc id 18146 rev 2 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 12 a i d drain current (continuous) at t c = 100 c 7.3 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 90 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj dv/dt (2) 2. i sd 12 a, di/dt 400 a/s, v dd = 400 v, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak d2pak r thj-case thermal resistance junction-case max 1.38 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 30 c/w
electrical characteristics STB16N65M5, std16n65m5 4/19 doc id 18146 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.230 0.279 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1250 30 3 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -100-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -30-pf r g intrinsic gate resistance f = 1 mhz open drain - 2 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 6 a, v gs = 10 v (see figure 18 ) - 31 8 12 - nc nc nc
STB16N65M5, std16n65m5 electrical characteristics doc id 18146 rev 2 5/19 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 8 a, r g = 4.7 ?, v gs = 10 v (see figure 19 ) (see figure 22 ) - 25 7 6 8 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 12 48 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 300 3.5 23 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 350 4 24 ns nc a
electrical characteristics STB16N65M5, std16n65m5 6/19 doc id 18146 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 610v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 609v1 i d 15 10 5 0 0 v d s (v) (a) 2 20 6.5v 6v 7v v g s =10v 7.5v 4 6 8 10 12 14 16 1 8 5.5v am0 3 17 8 v1 i d 15 10 5 0 3 5 v g s (v) (a) 4 6 7 20 v d s =10v 8 9 am0 3 179v1
STB16N65M5, std16n65m5 electrical characteristics doc id 18146 rev 2 7/19 figure 8. normalized b vdss vs. temperature figure 9. static drain-source on resistance figure 10. output capacitance stored energy figure 11. capacitance variations figure 12. gate charge vs. gate-source voltage figure 13. normalized on resistance vs. temperature bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d =1ma am0 3 1 8 7v1 r d s (on) 0.220 0.215 0 4 i d (a) ( ? ) 2 6 0.225 v g s =10v 10 8 12 0.210 0.2 3 5 0.2 3 0 0.240 0.245 am0 3 1 8 1v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 200 3 00 500 600 1 3 5 7 am0 33 12v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 3 1 83 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 8 25 10 v dd =520v v g s =10v i d =6a 12 5 15 20 3 0 3 5 100 200 3 00 400 500 v d s v g s am0 3 1 8 2v1 r d s (on) 1.7 1.5 1. 3 0.5 -50 0 t j (c) (norm) 50 100 0.7 0.9 1.1 2.1 1.9 v g s =10v i d =6.5v am0 3 1 8 5v1
electrical characteristics STB16N65M5, std16n65m5 8/19 doc id 18146 rev 2 figure 14. normalized gate threshold voltage vs. temperature figure 15. source-drain diode forward characteristics figure 16. switching losses vs. gate resistance (1) 1. eon including reverse re covery of a sic diode. v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) 1.10 50 100 i d =250 a am0 3 1 8 4v1 v s d 0 5 i s d (a) (v) 10 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =25c t j =150c t j =-25c am0 3 1 8 6v1 e 60 40 20 0 0 20 r g ( ? ) ( j) 10 3 0 8 0 100 40 eon eoff am10 3 59v1
STB16N65M5, std16n65m5 test circuits doc id 18146 rev 2 9/19 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive wavefor m figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data STB16N65M5, std16n65m5 10/19 doc id 18146 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STB16N65M5, std16n65m5 package mechanical data doc id 18146 rev 2 11/19 table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB16N65M5, std16n65m5 12/19 doc id 18146 rev 2 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimensions are in millimeters 0079457_ s 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
STB16N65M5, std16n65m5 package mechanical data doc id 18146 rev 2 13/19 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STB16N65M5, std16n65m5 14/19 doc id 18146 rev 2 figure 25. dpak (to-252) drawing figure 26. dpak footprint (b) b. all dimensions are in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STB16N65M5, std16n65m5 packaging mechanical data doc id 18146 rev 2 15/19 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500
packaging mechanical data STB16N65M5, std16n65m5 16/19 doc id 18146 rev 2 figure 27. tape p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 table 11. dpak (to-252) tape and reel mechanical data (continued) tape reel dim. mm dim. mm min. max. min. max. p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2
STB16N65M5, std16n65m5 packaging mechanical data doc id 18146 rev 2 17/19 figure 28. reel a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STB16N65M5, std16n65m5 18/19 doc id 18146 rev 2 6 revision history table 12. document revision history date revision changes 09-nov-2010 1 first release. 14-oct-2011 2 modified section 2.1: electrical characteristics (curves) : ? figure 6 , figure 7 , figure 8 , figure 9 , figure 13 and figure 14 ? added figure 15 updated r ds(on) value in coverpage and in table 4 updated values in table 6 updated section 4: package mechanical data and section 5: packaging mechanical data . minor text changes.
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